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KMID : 1059519930370040390
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Journal of the Korean Chemical Society
1993 Volume.37 No. 4 p.390 ~ p.395
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Nonstoichiometry of the Cerium Dioxide
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Yo Chul-Hyun
Kim Jeong-Geun
Ryu Kwang-Sun
Lee Eun-Seok
Choi Joong-Gill
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Abstract
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The x values and electrical conductivities of the nonstoichiometric compounds CeO2-x have been measured in a temperature range from 600 to 1200℃ under oxygen partial pressure of 2 × 10-1 ∼ l × l0-4 atm. The enthalpy of the defect formation shows an endothermic process with the oxygen partial pressure dependence (1/n value) of -1/3.18 ∼ -1/3.69. The activation energy and 1/n value for the electrical conductivity are estimated as 1.75 eV and -1/4, respectively. According to the x values, the σ values, and the thermodynamic data, the defect structure of the ceria seems to be the formation of singly charged negative oxygen vacancies. The n-type semiconducting behaviors could be explained by the presence of excess metals in the lattice as the conduction electron donor.
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KEYWORD
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